Instabilities in silicon devices

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North-Holland, Sole distributors for the U.S.A. and Canada, Elsevier Science Pub. Co. , Amsterdam, New York, New York, N.Y., U.S.A
Silicon -- Electric properties., Integrated circuits -- Passiva
Statementedited by Gérard Barbottin and André Vapaille.
ContributionsBarbottin, Gérard, 1946-, Vapaille, André, 1933-
LC ClassificationsTK7871.15.S55 I57 1986
The Physical Object
Pagination3 v. :
ID Numbers
Open LibraryOL2547394M
ISBN 100444879447
LC Control Number85029322

However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation.

Instabilities in Silicon Devices. Explore book series content Latest volume All volumes. Latest volumes. Volume 3. 2– () View all volumes. Find out more. About the book series. Search in this book series. Looking for an author or a specific volume/issue.

Chapter 4 Hot carrier injections in SIO 2 and related instabilities in. Instabilities in Silicon Devices, Vol. 1: Silicon Passivation and Related Instabilities [Barbottin, Gerard] on *FREE* shipping on qualifying offers.

Instabilities in Silicon Devices, Vol. 1: Silicon Passivation and Related InstabilitiesAuthor: Gerard Barbottin. New Insulators Devices and Radiation Effects, Volume 3 (Instabilities in Silicon Devices) [Gerard Barbottin, Andre Vapaille] on *FREE* shipping on qualifying offers.

Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in.

Search in this book series. New Insulators, Devices and Radiation Effects. Edited by Gérard Barbottin, André Vapaille. Volume 3, Pages () List of errata to volume 1 of instabilities in silicon devices silicon passivation and related instabilities Pages Download PDF.

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Instabilities in Silicon Devices. Country: United States - SIR Ranking of United States: 4. H Index. Subject Area and Category: Engineering Electrical and Electronic Engineering Materials Science Electronic, Optical and Magnetic Materials: Publisher: JAI Press: Publication type: Book Series: ISSN: Coverage: Doped with different impurities, silicon carbide is used in semiconductor technology [63, 12].

Field-effect transistors, diodes and other electronic devices based on SiC have several advantages compared to similar silicon devices, for example, the opportunity to work at temperatures up to °C, high speed and high radiation : Kair Kh.

Nussupov, Nurzhan B. Beisenkhanov. Today, silicon plays a central role within the semiconductor industry for microelectronic and nanoelectronic devices. Silicon wafers of high purity (% or higher) single-crystalline material can be obtained via a combination of liquid growth methods, such as pulling a seed crystal from the melt and by subsequent epitaxy.

Advanced Silicon Devices – Applications and Technology Trends Gerald Deboy Winfried Kaindl, Uwe Kirchner, Matteo Kutschak, Eric Persson, Michael Treu. Textbooks typically deal with idealized devices. Real devices, however, contain defects which distort the device's characteristics.

In mainstream silicon technologies, these defects are primarily located at material interfaces, for example at the Si/SiO 2 interface between the insulating layer and the silicon channel in MOSFETs, as well as in the insulating material itself.

Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices Abstract: In the last 15 years, the global demand for power saving, efficiency, and weight, size, and cost reduction in both the consumer and the industrial fields have strongly pushed the research and advancements in electronic power by: About this book Silicon is the most important material for the electronics industry.

In modern microelectronics silicon devices like diodes and transistors play a major role, and devices like photodetectors or solar cells gain ever more importance. Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices. Instabilities in power devices are a very actual topic for device.

Instabilities in Silicon Devices, Vol. 1: Silicon Passivation and Related Instabilities by Gerard Barbottin and a great selection of related books, art and collectibles available now at - Instabilities in Silicon Devices, Vol 1: Silicon Passivation and Related Instabilities - AbeBooks.

Abstract. Electrical instabilities in silicon-on-insulator (SOI) materials and devices during voltage and thermal stressing are fundamentally due to the movement and trapping of charge in the buried oxide (BOX), this being electrically the least robust part of the SOI by: 2.

The 11th edition of Electronic Devices and Circuit Theory By Robert Boylestad and Louis Nashelsky offers students complete, comprehensive coverage of the subject, focusing on all the essentials they will need to succeed on the job. Setting the standard for nearly 30 years, this highly accurate text is supported by strong pedagogy and content that is ideal for new.

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Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs. / Reigosa, Paula Diaz. Aalborg Universitetsforlag, p. (Ph.d.-serien for Det Ingeniør- og Naturvidenskabelige Fakultet, Aalborg Universitet).

Research output: Book/Report › Ph.D. thesis › Cited by: 1. Description. Plasma and Current Instabilities in Semiconductors details the main ideas in the physics of plasma and current instabilities in semiconductors. The title first covers plasma in semiconductors, and then proceeds to tackling waves in plasma.

Next, the selection details wave instabilities in plasma and drift Edition: 1. Instabilities in silicon devices. [Gérard Barbottin; André Vapaille;] Print book: EnglishView all editions and formats: Rating: (not yet rated) 0 with reviews - Be the first.

Subjects: Silicon passivation and related instabilities -- v. New insulators, devices. The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field.

Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the /5(16).

Negative-bias temperature instability (NBTI) is a key reliability issue in manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often approximated by a power-law dependence on time.

It is of immediate concern in p-channel MOS devices (pMOS), since. About this book. Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the : Springer US.

The stability of a plasma is an important consideration in the study of plasma a system containing a plasma is at equilibrium, it is possible for certain parts of the plasma to be disturbed by small perturbative forces acting on stability of the system determines if the perturbations will grow, oscillate, or be damped out.

In many cases, a plasma can be treated. 26 Bias-T emperature Instabilities in Silicon Carbide MOS Devices Fig. Schematic illustration of p -substrate capacit or. The wafer is n + 4H-SiC, the epitaxial.

Wolters, DR, Verweij, JF & Zegers-van Duijnhoven, ATADielectric breakdown in SiO2: A survey of test methods. in G Barbottin & A Vapaille (eds), New Insulators, Devices and Radiation Effects. Instabilities in Silicon Devices, vol. 3, Elsevier, pp.

Author: D.R. Wolters, J.F. Verweij, A.T.A. Zegers-van Duijnhoven. SiO 2-passivated High Efficiency Silicon Solar Cells: Process Dependence of Si W.R. Fahrner, D. Bräunig in “Instabilities in Silicon Devices” ed. by G. Barbottin, A. Vapaille Kopp J., Knobloch J. () SiO 2-passivated High Efficiency Silicon Solar Cells: Process Dependence of Si-SiO 2 Interface Recombination.

In: Luque A., Sala G Cited by: AN OVERVIEW OF SILICON CARBIDE DEVICE TECHNOLOGY Philip G. Neudeck Ohio Aerospace Institute Aerospace Parkway Brook Park, OH Lawrence G. Matus NASA Lewis Research Center Brookpark Road Cleveland, OH Abstract Recent progress in the development of silicon carbide (SIC) as a semiconductor is briefly Size: KB.

The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small.

Abstract: A new model for high bias transport is reported which describes the time-dependent reverse current variations in amorphous silicon Schottky diodes.

This phenomenon is of practical importance in the design and optimization of pixels for large-area optical and X-ray imaging. In the model, the main components of the reverse current, namely thermionic emission and Cited by: It has been demonstrated that amorphous silicon p+ni junctions exhibit nonvolatile polarity dependent memory switching after initial conditioning by means of a high applied potential (‘forming’).

The memory on-state is due to the presence of a highly conducting filament, whose physical properties are not well understood.

Recent work has shown that in junctions where Author: W.K. Choi, S. Reynolds, J. Hajto, A.E. Owen, A.J. Snell, M.J. Rose, P.G.

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Lecomber, W.E. Spear. Many of the formal technical publications of the NASA Glenn Smart Sensors and Electronics Systems Branch are listed in the below table.

These technical publications are posted on this site in order to ensure timely public dissemination of NASA technical work. We present a first study of threshold voltage instabilities of semi-vertical GaN-on-Si trench-MOSFETs, based on double pulsed, threshold voltage transient, and UV-assisted C–V analysis.

Under positive gate stress, small negative V th shifts (low stress) and a positive V th shifts (high stress) are observed, ascribed to trapping within the insulator and at the Author: Kalparupa Mukherjee, Matteo Borga, Maria Ruzzarin, Carlo De Santi, Steve Stoffels, Shuzhen You, Kare.Understanding the origin of spatio-temporal order in open systems far from thermal equilibrium and the selection mechanisms of spatial struc­ tures and their symmetries is a major theme of present day research into the structures of continuous matter.

The development of Brand: Springer Netherlands.